PART |
Description |
Maker |
APT150GN120JDQ4 |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; IC (A): 99; 215 A, 1200 V, N-CHANNEL IGBT Thunderbolt IGBT
|
Microsemi, Corp. Microsemi Corporation
|
MGW20N120_D ON1922 MGW20N120 |
Insulated Gate Bipolar Transistor From old datasheet system IGBT IN TO-47 20 A @ 90 28 A @ 25 1200 VOLTS
|
ONSEMI[ON Semiconductor]
|
MGW12N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
|
RM60DZ-24 RM60DZ-2H RM60CZ-24 RM60CZ-2H |
60 A, 1200 V, SILICON, RECTIFIER DIODE HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE 高压中功率常规使用绝缘型
|
Mitsubishi Electric Semiconductor Mitsubishi Electric, Corp.
|
IRG7PH35U-EP IRG7PH35UPBF IRG7PH35UPBF-15 |
55 A, 1200 V, N-CHANNEL IGBT, TO-247AD INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
BSM100GT120DN2 100T12N2 |
IGBT Power Module (Three single switches Including fast free-wheeling diodes Package with insulated metal base plate) 150 A, 1200 V, N-CHANNEL IGBT From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
TM400-24 TM400-2H TM400CZ TM400CZ-24 TM400CZ-2H TM |
BATTERY SLA 6V 7AH .250 TERM 大功率常规使用绝缘型 CONNECTOR ACCESSORY HIGH POWER GENERAL USE INSULATED TYPE 620 A, 1200 V, SCR 620 A, 400 V, SCR
|
Mitsubishi Electric Semicon... Mitsubishi Electric, Corp. Powerex Power Semiconductors MITSUBISHI[Mitsubishi Electric Semiconductor]
|
IRG4PH40UD2-E IRG4PH40UD2-EPBF |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AD package
|
IRF[International Rectifier]
|
LTFD1200-01 |
Telecom Disconnect Switch LTFD 1200 Series - 900 to 1200 Amp
|
LITTELFUSE[Littelfuse]
|
CM50DY-24H |
Dual IGBTMOD 50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc. Powerex Power Semiconductors
|
SDR1-12 SDR1-12S SDR1-12SMS SDR1-12SMSS SDR1-12SMS |
1 A, 1200 V, SILICON, SIGNAL DIODE 1.0 AMP 1200 - 1600 VOLTS 70 nsec ULTRA FAST RECTIFIER
|
SOLID STATE DEVICES INC Solid States Devices, Inc
|
TA202412 TA202414 TA203012 TA203014 TA204012 TA204 |
Phase Control SCR (1200-1400 Amperes Avg 2400-4000 Volts) 第一阶段控制晶闸管(1200-1400安培平均2400-4000伏特
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|